The current status of High K dielectrics in Very Large Scale Integrated circuit\n(VLSI) manufacturing for leading edge Dynamic Random Access Memory (DRAM) and\nComplementary Metal Oxide Semiconductor (CMOS) applications is summarized along\nwith the deposition methods and general equipment types employed. Emerging applications\nfor High K dielectrics in future CMOS are described as well for implementations in 10 nm and\nbeyond nodes. Additional emerging applications for High K dielectrics include Resistive\nRAM memories, Metal-Insulator-Metal (MIM) diodes, Ferroelectric logic and memory\ndevices, and as mask layers for patterning. Atomic Layer Deposition (ALD) is a common and\nproven deposition method for all of the applications discussed for use in future\nVLSI manufacturing.
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